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IRG4RC10UD Datasheet(PDF) 1 Page - International Rectifier |
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IRG4RC10UD Datasheet(HTML) 1 Page - International Rectifier |
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1 / 10 page  Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 8.5 IC @ TC = 100°C Continuous Collector Current 5.0 ICM Pulsed Collector Current Q 34 A ILM Clamped Inductive Load Current R 34 IF @ TC = 100°C Diode Continuous Forward Current 4.0 IFM Diode Maximum Forward Current 16 VGE Gate-to-Emitter Voltage ± 20 V PD @ TC = 25°C Maximum Power Dissipation 38 PD @ TC = 100°C Maximum Power Dissipation 15 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m) Parameter Min. Typ. Max. Units RθJC Junction-to-Case - IGBT ––– ––– 3.3 RθJC Junction-to-Case - Diode ––– ––– 7.0 °C/W RθJA Junction-to-Ambient (PCB mount)* ––– ––– 50 Wt Weight ––– 0.3 (0.01) ––– g (oz) IRG4RC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Features Features Features Features E G n-c hannel C VCES = 600V VCE(on) typ. = 2.15V @VGE = 15V, IC = 5.0A tf (typ.) = 140ns Thermal Resistance UltraFast CoPack IGBT 12/30/00 Absolute Maximum Ratings • UltraFast: Optimized for medium operating frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-252AA package Benefits • Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing • Lower losses than MOSFET's conduction and Diode losses PD 91571A W D-PAK TO-252AA Details of note Q through T are on the last page www.irf.com 1 |
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