IRGBC40 datasheet(2/6 Pages) IRF

2 / 6 page

C-850

IRGBC40K

Notes:

VCC=80%(VCES), VGE=20V, L=10µH,

RG= 10Ω, ( See fig. 13a )

Repetitive rating; V GE=20V, pulse width

limited by max. junction temperature.

( See fig. 13b )

Repetitive rating; pulse width limited

by maximum junction temperature.

Pulse width

≤ 80µs; duty factor ≤ 0.1%.

Pulse width 5.0µs,

single shot.

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

Total Gate Charge (turn-on)

—

IC = 25A

Qge

Gate - Emitter Charge (turn-on)

—

VCC = 400V

See Fig. 8

Qgc

Gate - Collector Charge (turn-on)

—

VGE = 15V

td(on)

Turn-On Delay Time

—

TJ = 25°C

Rise Time

—

IC = 25A, VCC = 480V

td(off)

Turn-Off Delay Time

—

160

240

VGE = 15V, RG = 10Ω

Fall Time

—

130

200

Energy losses include "tail"

Eon

Turn-On Switching Loss

—

0.52

—

Eoff

Turn-Off Switching Loss

—

1.2

—

See Fig. 9, 10, 11, 14

Ets

Total Switching Loss

—

1.7

2.6

tsc

Short Circuit Withstand Time

—

µs

VCC = 360V, T J = 125°C

VGE = 15V, RG = 10Ω, VCPK < 500V

td(on)

Turn-On Delay Time

—

TJ = 150°C,

Rise Time

—

IC = 25A, VCC = 480V

td(off)

Turn-Off Delay Time

—

300

—

VGE = 15V, RG = 10Ω

Fall Time

—

310

—

Energy losses include "tail"

Ets

Total Switching Loss

—

3.6

—

See Fig. 10, 14

Internal Emitter Inductance

—

7.5

—

Measured 5mm from package

Cies

Input Capacitance

—

1500

—

VGE = 0V

Coes

Output Capacitance

—

190

—

VCC = 30V

See Fig. 7

Cres

Reverse Transfer Capacitance

—

ƒ = 1.0MHz

Parameter

Min. Typ. Max. Units

Conditions

V(BR)CES

Collector-to-Emitter Breakdown Voltage

600

—

VGE = 0V, IC = 250µA

V(BR)ECS

Emitter-to-Collector Breakdown Voltage

—

VGE = 0V, IC = 1.0A

∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage

—

0.46

—

V/°C

VGE = 0V, IC = 1.0mA

VCE(on)

Collector-to-Emitter Saturation Voltage

—

2.1

3.2

IC = 25A

VGE = 15V

—

2.8

—

IC = 42A

See Fig. 2, 5

—

2.5

—

IC = 25A, TJ = 150°C

VGE(th)

Gate Threshold Voltage

3.0

—

5.5

VCE = VGE, IC = 250µA

∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage

—

-13

—

mV/°C

VCE = VGE, IC = 250µA

gfe

Forward Transconductance

7.0

—

VCE = 100V, IC = 25A

ICES

Zero Gate Voltage Collector Current

—

250

µA

VGE = 0V, VCE = 600V

—

1000

VGE = 0V, VCE = 600V, T J = 150°C

IGES

Gate-to-Emitter Leakage Current

—

±100

VGE = ±20V

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

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