SSG9904_15 datasheet(1/4 Pages) SECOS

Part #	SSG9904

Description	Dual-N Enhancement Mode Power MOSFET

PDF	4 Pages

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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Elektronische Bauelemente

SSG9904

7.2A, 40V, RDS(ON) 26mΩ

Ω

Dual-N Enhancement Mode Power MOSFET

25-Apr-2014 Rev. A

Page 1 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

A

H

B

M

D

C

J

K

F

L

E

N

G

9904SS

= Date Code

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The SSG9904 provide the designer with the best

Combination of fast switching, ruggedized device design,

Ultra low on-resistance and cost-effectiveness.

FEATURES

Low on-resistance

Simple Drive Requirement

Double-N MosFET Package

MARKING CODE

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOP-8

3K

13’ inch

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

VDS

40

V

Gate-Source Voltage

VGS

±20

V

TA = 25°C

7.2

Continuous Drain Current@ VGS =10V

1

TA = 70°C

ID

5.6

A

Pulsed Drain Current

2

IDM

14.5

A

Single Pulse Avalanche Energy

3

EAS

28

mJ

Avalanche Current

IAS

17.8

A

Power Dissipation@ TC=25°C

4

PD

2.5

W

Operating Junction & Storage Temperature Range

TJ, TSTG

-55~150

°C

Thermal Resistance Ratings

Thermal Resistance Junction-ambient (Max.)

1

RθJA

85

°C / W

Thermal Resistance Junction-Case (Max.)

1

RθJC

50

°C / W

SOP-8

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

5.80

6.20

H

0.35

0.49

B

4.80

5.00

J

0.375 REF.

C

3.80

4.00

K

45°

D

0°

8°

L

1.35

1.75

E

0.40

0.90

M

0.10

0.25

F

0.19

0.25

N

0.25 REF.

G

1.27 TYP.

G

S

G

S

D

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