IRHM9064 datasheet(3/4 Pages) IRF

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IRHM9064

Radiation Characteristics

Table 2. High Dose Rate

1011 Rads (Si)/sec 1012 Rads (Si)/sec

Parameter

Min Typ Max

Units

Test Conditions

VDSS

Drain-to-Source Voltage

—

-48

—

-48

Applied drain-to-source voltage during

gamma-dot

IPP

—

-100

—

-100

—

Peak radiation induced photo-current

di/dt

—

-800

—

-160

A/µsec Rate of rise of photo-current

0.1

—

0.8

—

µH

Circuit inductance required to limit di/dt

Table 3. Single Event Effects

LET (Si)

Fluence

Range

VDS Bias

VGS Bias

Parameter

Typical

Units

Ion

(MeV/mg/cm2)

(ions/cm2)

(µm)

(V)

BVDSS

-60

1 x 105

~41

-60

Radiation Performance of P-Channel Rad

Hard HEXFETs

International Rectifier Radiation Hardened HEXFETs

are tested to verify their hardness capability.The hard-

ness assurance program at International Rectifier

uses two radiation environments.

Every manufacturing lot is tested in a low dose rate

(total dose) environment per MlL-STD-750, test

method 1019. International Rectifier has imposed a

standard gate voltage of -12 volts per note 6 and a

VDSS bias condition equal to 80% of the device rated

voltage per note 7. Pre- and post-radiation limits of

the devices irradiated to 1 x 105 Rads (Si) are identi-

cal and are presented in Table 1. The values in Table

1 will be met for either of the two low dose rate test

circuits that are used. Both pre- and post-radiation

performance are tested and specified using the same

drive circuitry and test conditions in order to provide

a direct comparison. It should be noted that at a ra-

diation level of 1 x 105 Rads (Si) no changes in limits

are specified in DC parameters.

High dose rate testing may be done on a special

request basis using a dose rate up to 1 x 1012 Rads

(Si)/Sec.

International Rectifier radiation hardened P-Channel

HEXFETs are considered to be neutron-tolerant, as

stated in MIL-PRF-19500 Group D. International

Rectifier radiation hardened P-Channel HEXFETs

have been characterized in heavy ion Single Event

Effects (SEE) environments and the results are shown

in Table 3.

Table 1. Low Dose Rate

IRHM9064

Parameter

100K Rads (Si)

Units

Test Conditions

Min

Max

BVDSS

Drain-to-Source Breakdown Voltage

-200

—

VGS = 0V, ID = -1.0mA

VGS(th)

Gate Threshold Voltage

-2.0

-4.0

VGS = VDS, ID = -1.0mA

IGSS

Gate-to-Source Leakage Forward

—

-100

VGS = -20V

IGSS

Gate-to-Source Leakage Reverse

—

100

VGS = 20V

IDSS

Zero Gate Voltage Drain Current

—

-25

µA

VDS=0.8 x Max Rating, VGS=0V

RDS(on)1

Static Drain-to-Source

—

0.060

Ω

VGS = -12V, ID = -26A

On-State Resistance One

VSD

Diode Forward Voltage

—

-3.0

TC = 25°C, IS = -35A,VGS = 0V

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