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IRL2203 Datasheet(PDF) 2 Page - International Rectifier |
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IRL2203 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRL2203N 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 7.0 VGS = 10V, ID = 60A ––– ––– 10 VGS = 4.5V, ID = 48A VGS(th) Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance 73 ––– ––– S VDS = 25V, ID = 60A ––– ––– 25 µA VDS = 30V, VGS = 0V ––– ––– 250 VDS = 24V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -16V Qg Total Gate Charge ––– ––– 60 ID = 60A Qgs Gate-to-Source Charge ––– ––– 14 nC VDS = 24V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 33 VGS = 4.5V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 11 ––– VDD = 15V tr Rise Time ––– 160 ––– ID = 60A td(off) Turn-Off Delay Time ––– 23 ––– RG = 1.8Ω tf Fall Time ––– 66 ––– VGS = 4.5V, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 3290 ––– VGS = 0V Coss Output Capacitance ––– 1270 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 170 ––– pF ƒ = 1.0MHz, See Fig. 5 EAS Single Pulse Avalanche Energy ––– 1320
290 mJ IAS = 60A, L = 0.16mH S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 60A, VGS = 0V trr Reverse Recovery Time ––– 56 84 ns TJ = 25°C, IF = 60A Qrr Reverse Recovery Charge ––– 110 170 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 116 400 A Starting TJ = 25°C, L = 0.16mH RG = 25Ω, IAS = 60A, VGS=10V (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Notes: I SD ≤ 60A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175°C . Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. S D G Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) Static Drain-to-Source On-Resistance IGSS nH LS Internal Source Inductance ––– 7.5 ––– LD Internal Drain Inductance ––– 4.5 ––– IDSS Drain-to-Source Leakage Current m Ω |
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