IRL620S datasheet(2/9 Pages) IRF

2 / 9 page

Parameter

Min. Typ. Max. Units Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

200

—

VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

—

0.27

—

V/°C

Reference to 25°C, ID = 1mA

RDS(on)

Static Drain-to-Source On-Resistance

—

0.80

VGS = 10.0V, ID = 3.1A

—

1.0

VGS = 4.0V, ID = 2.6A

VGS(th)

Gate Threshold Voltage

1.0

—

2.0

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

1.2

—

VDS = 50V, ID = 3.1A

IDSS

Drain-to-Source Leakage Current

—

VDS = 200V, VGS = 0V

—

250

VDS = 320V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

—

100

VGS = 10V

Gate-to-Source Reverse Leakage

—

-100

VGS = -10V

Total Gate Charge

—

ID = 5.2A

Qgs

Gate-to-Source Charge

—

2.9

VDS = 160V

Qgd

Gate-to-Drain ("Miller") Charge

—

9.6

VGS = 5.0V, See Fig. 6 and 13

td(on)

Turn-On Delay Time

—

4.2

—

VDD = 100V

Rise Time

—

ID = 5.2A

td(off)

Turn-Off Delay Time

—

RG = 9.0Ω

Fall Time

—

RD = 20Ω, See Fig. 10

Internal Drain Inductance

—

4.5

—

Between lead,

6mm (0.25in.)

Internal Source Inductance

—

7.5

—

from package

and center of

die contact

Ciss

Input Capacitance

—

360

—

VGS = 0V

Coss

Output Capacitance

—

VDS = 25V

Crss

Reverse Transfer Capacitance

—

ƒ = 1.0MHz, See Fig. 5

IRL620S

Notes:

Parameter

Min. Typ. Max. Units Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode)

p-n junction diode.

VSD

Diode Forward Voltage

—

1.8

TJ = 25°C, IS = 5.2A, VGS = 0V

trr

Reverse Recovery Time

—

180

270

TJ = 25°C, IF = 5.2A

Qrr

Reverse RecoveryCharge

—

1.1

1.7

µC

di/dt = 100A/µs

ton

Forward Turn-On Time

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

VDD = 50V, starting TJ = 25°C, L = 6.9mH

RG = 25Ω, IAS = 5.2A. (See Figure 12)

ISD ≤ 5.2A, di/dt ≤ 95A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

Pulse width

≤ 300µs; duty cycle ≤ 2%.

Source-Drain Ratings and Characteristics

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

—

5.2

Ω

µA

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