Parameter

Min.

Typ.

Max.

Units

Junction-to-Case

––––

––––

3.1

Junction-to-Ambient

––––

––––

65

IRLI640G

PD - 9.1237

Revision 0

Absolute Maximum Ratings

Thermal Resistance

Parameter

Max.

Units

9.9

6.3

A

Pulsed Drain Current

40

Power Dissipation

40

W

Linear Derating Factor

0.32

W/°C

Gate-to-Source Voltage

±10

V

Single Pulse Avalanche Energy

290

mJ

Avalanche Current

9.9

A

Repetitive Avalanche Energy

4.0

mJ

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

Operating Junction and

-55 to + 150

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)

Isolated Package

High Voltage Isolation = 2.5KVRMS

Sink to Lead Creepage Dist. 4.8mm

Logic-Level Gate Drive

Fast Switching

Ease of paralleling

Third Generation HEXFETs from International Rectifier provide the designer

with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The TO-220 Fullpak eliminates the need for additional insulating hardware in

commercial-industrial applications.

The moulding compound used provides a

high isolation capability and a low thermal resistance between the tab and external

heatsink. This isolation is equivalent to using a 100 micron mica barrier with

standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip

or by a single screw fixing.

Description

°C/W

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