PD - 91260E

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

A customized leadframe has been incorporated into the

standard SOT-23 package to produce a HEXFET Power

MOSFET with the industry's smallest footprint. This

package, dubbed the Micro3, is ideal for applications

where printed circuit board space is at a premium. The low

profile (<1.1mm) of the Micro3 allows it to fit easily into

extremely thin application environments such as portable

electronics and PCMCIA cards.

IRLML5103

04/29/03

Description

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Generation V Technology

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Ultra Low On-Resistance

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P-Channel MOSFET

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SOT-23 Footprint

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Low Profile (<1.1mm)

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Available in Tape and Reel

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Fast Switching

S

D

G

Micro3

Parameter

Max.

Units

-0.76

-0.61

A

Pulsed Drain Current 

-4.8

Power Dissipation

540

mW

Linear Derating Factor

4.3

mW/°C

Gate-to-Source Voltage

± 20

V

dv/dt

Peak Diode Recovery dv/dt ‚

-5.0

V/ns

Junction and Storage Temperature Range

-55 to + 150

°C

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

Maximum Junction-to-Ambient

„

–––

230

Thermal Resistance

°C/W