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AN1768 Datasheet(PDF) 2 Page - STMicroelectronics

Part # AN1768
Description  ADMISSIBLE AVALANCHE POWER OF SCHOTTKY DIODES
PDF  2 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN1768 Datasheet(HTML) 2 Page - STMicroelectronics

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AN1768 - APPLICATION NOTE
2/2
2. DESIGN EXAMPLE
Let us consider the use of a STPS20H100CT (two
10A, 100V ST Schottky diodes in TO-220 pack-
age) used in a flyback converter (
figure 4).
In a typical worst-case situation, the application
conditions are:
n
Operating junction temperature of the Schottky
diode:
Tj = 100°C
n
Pulse duration of the avalanche current:
tp = 10ns
n
Avalanche energy by pulse through the two
diodes connected in parallel:
VP = -130V, IAR = -1.5A, tp = 10ns
⇒EAP = 1.95µJ
•
Table 1 gives:
PARM(1µs, 25°C)STPS20H100CT = 10.8 kW per diode
•
Figure 2 gives:
Ptp
C
Ptp
C
ARM
ARM
(,
)
(,
)
.
100
25
045
°
°
=
⇒PARM(1µs,100°C) = PARM(1µs,25°C) x 0.45
⇒PARM(1µs,100°C) = 4.86 kW
•
Fig.3 gives:
Pns T
Ps T
ARM
j
ARM
j
(, )
(, )
10
1
1
µ
=
⇒PARM(10ns,100°C) = PARM(1µs,100°C)
⇒PARM(10ns,100°C) = 4.86 kW
Finally,
EARM(10ns,100°C) = PARM(10ns,100°C)x10ns
The maximum admissible avalanche energy of the
STPS20H100CT at 10ns and 100°C is:
EARM(10ns,100°C) = 48.6µJ per diode
Consequently,
as
the
guaranteed
value
EARM(10ns,100°C) (per diode) is higher than EAP
measured through the two diodes connected in
parallel (48.6µJ > 1.95µJ), the STPS20H100CT
will withstand the avalanche energy generated by
the converter.
Vout
Idiode
Vdiode
Vin
Fig. 4: Topology of a flyback converter.
IAR
VR
tp
IDiode
corresponding energy
in the avalanche area
Fig. 5: Current and voltage waveforms through
the two diodes.
(IAR = repetitive avalanche current)
Figure 5 shows the corresponding current and
voltage waveforms through the two diodes.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not au-
thorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners.
© 2003 STMicroelectronics - All rights reserved.
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