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UD0016 Datasheet(PDF) 2 Page - Unitpower Technology Limited

Part # UD0016
Description  N-Ch 100V Fast Switching MOSFETs
PDF  4 Pages
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Manufacturer  UNITPOWER [Unitpower Technology Limited]
Direct Link  http://www.unitpower.cn
Logo UNITPOWER - Unitpower Technology Limited

UD0016 Datasheet(HTML) 2 Page - Unitpower Technology Limited

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N-Ch 100V Fast Switching MOSFETs
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
100
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.098
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V , ID=20A
---
38
47
m
Ω
VGS=4.5V , ID=15A
---
40
50
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.0
1.5
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-5.52
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=80V , VGS=0V , TJ=25℃
---
---
10
uA
VDS=80V , VGS=0V , TJ=55℃
---
---
100
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=20A
---
28.7
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.6
3.2
Ω
Qg
Total Gate Charge (10V)
VDS=80V , VGS=10V , ID=20A
---
60
84
nC
Qgs
Gate-Source Charge
---
9.7
14
Qgd
Gate-Drain Charge
---
11.8
16.5
Td(on)
Turn-On Delay Time
VDD=50V , VGS=10V , RG=3.3Ω
ID=20A
---
10.4
21
ns
Tr
Rise Time
---
46
83
Td(off)
Turn-Off Delay Time
---
54
108
Tf
Fall Time
---
10
20
Ciss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
---
3848
5387
pF
Coss
Output Capacitance
---
137
192
Crss
Reverse Transfer Capacitance
---
82
115
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=25V , L=0.1mH , IAS=15A
13.4
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
VG=VD=0V , Force Current
---
---
22
A
ISM
Pulsed Source Current
2,6
---
---
45
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=1A , TJ=25℃
---
---
1.2
V
trr
Reverse Recovery Time
IF=20A , dI/dt=100A/µs , TJ=25℃
---
30
---
nS
Qrr
Reverse Recovery Charge
---
37
---
nC
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=27A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Guaranteed Avalanche Characteristics
UD0016



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