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UD3010 Datasheet(PDF) 2 Page - Unitpower Technology Limited

Part # UD3010
Description  N-Ch 30V Fast Switching MOSFETs
PDF  4 Pages
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Manufacturer  UNITPOWER [Unitpower Technology Limited]
Direct Link  http://www.unitpower.cn
Logo UNITPOWER - Unitpower Technology Limited

UD3010 Datasheet(HTML) 2 Page - Unitpower Technology Limited

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N-Ch 30V Fast Switching MOSFETs
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
30
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.016
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V , ID=10A
---
38
45
m
Ω
VGS=4.5V , ID=5A
---
56
70
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.0
1.5
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-3.04
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=24V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=24V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=10A
---
6.7
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
2.3
4.6
Ω
Qg
Total Gate Charge (4.5V)
VDS=15V , VGS=4.5V , ID=10A
---
2.65
3.71
nC
Qgs
Gate-Source Charge
---
1.08
1.51
Qgd
Gate-Drain Charge
---
1.06
1.48
Td(on)
Turn-On Delay Time
VDD=15V , VGS=10V , RG=3.3Ω
ID=10A
---
1.0
2.0
ns
Tr
Rise Time
---
13.8
24.8
Td(off)
Turn-Off Delay Time
---
7.2
14.4
Tf
Fall Time
---
3.6
7.2
Ciss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
---
220
308.0
pF
Coss
Output Capacitance
---
38
53.2
Crss
Reverse Transfer Capacitance
---
32
44.8
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,4
VG=VD=0V , Force Current
---
---
15
A
ISM
Pulsed Source Current
2,4
---
---
30
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
trr
Reverse Recovery Time
IF=10A , dI/dt=100A/µs , TJ=25℃
---
4.2
---
nS
Qrr
Reverse Recovery Charge
---
0.83
---
nC
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
UD3010



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