HMIC Silicon PIN Diode SP3T Switch with Integrated Bias Network

2 - 18 GHz

Rev. V1

MASW-011053

2

2

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macomtech.com for additional data sheets and product information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

2

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Insertion Loss

2 GHz

6 GHz

12 GHz

18 GHz

dB

—

1.0

0.6

0.8

1.1

2.0

1.1

1.3

1.9

Input to Output Isolation

2 GHz

6 GHz

12 GHz

18 GHz

dB

54

47

40

36

62

55

50

47

—

Input Return Loss

2 GHz

6 GHz

12 GHz

18 GHz

dB

—

14

15

16

14

—

Input/Output IP3 @ 5 dBm

2 GHz

6 GHz

12 GHz

18 GHz

dBm

—

46.0

48.8

50.8

45.0

—

Input/Output IP2 @ 5 dBm

2 GHz

6 GHz

12 GHz

18 GHz

dBm

—

66.3

66.8

66.0

68.3

—

—

ns

—

50

—

3. Typical switching speed measured from 10% to 90% of detected RF signal driven by TTL compatible drivers using RC output spiking

network, R = 50 – 200 Ω , C = 390 – 560 pF.

4. Exceeding any one or combination of these limits may cause

permanent damage to this device.

5. MACOM does not recommend sustained operation near these

survivability limits.

Parameter

Absolute Maximum

Forward Bias Current

60 mA

Reverse Bias Voltage

(RF & DC)

50 V

RF Incident Power

33 dBm CW

Junction Temperature

+175°C

Operating Temperature

-65°C to +125°C

Storage Temperature

-65°C to +150°C

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

HMIC

Integrated

Circuits

are

sensitive

to

electrostatic discharge (ESD) and can be damaged

by static electricity. Proper ESD control techniques

should be used when handling these devices.

Electrical Specifications: