IRF7106 datasheet(2/7 Pages) IRF

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IRF7106

Parameter

Min. Typ. Max. Units

Conditions

N-Ch

—

VGS = 0V, ID = 250µA

P-Ch -20

—

VGS = 0V, ID = -250µA

N-Ch

— 0.037

—

Reference to 25°C, I D = 1mA

P-Ch

— -0.022 —

Reference to 25°C, I D = -1mA

—

— 0.125

VGS = 10V, ID = 1.0A

—

0.25

VGS = 4.5V, ID = 0.50A

—

0.20

VGS = -10V, ID = -1.0A

—

0.35

VGS = -4.5V, ID = -0.50A

N-Ch 1.0

—

VDS = VGS, ID = 250µA

P-Ch -1.0

—

VDS = VGS, ID = -250µA

N-Ch

—

4.4

—

VDS = 15V, ID = 3.0A

P-Ch

—

3.0

—

VDS = -15V, ID = -3.0A

N-Ch

—

2.0

VDS = 16V, VGS = 0V

P-Ch

—

-2.0

VDS = -16V, VGS = 0V

N-Ch

—

VDS = 16V, VGS = 0V, TJ = 125°C

P-Ch

—

-25

VDS = -16V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

N-P

––

—

±100

VGS = ± 20V

N-Ch

—

9.1

P-Ch

—

N-Ch

—

1.2

—

P-Ch

—

1.6

—

N-Ch

—

2.5

—

P-Ch

—

3.5

—

N-Ch

—

5.0

P-Ch

—

N-Ch

—

P-Ch

—

N-Ch

—

P-Ch

—

N-Ch

—

P-Ch

—

Internal Drain Inductace

N-P

—

4.0

—

Between lead tip

Internal Source Inductance

N-P

—

6.0

—

and center of die contact

N-Ch

—

300

—

P-Ch

—

280

—

N-Ch

—

260

—

P-Ch

—

250

—

N-Ch

—

P-Ch

—

Parameter

Min. Typ. Max. Units

Conditions

N-Ch

—

1.7

P-Ch

—

-1.6

N-Ch

—

P-Ch

—

-10

N-Ch

—

0.90

1.2

TJ = 25°C, IS = 1.6A, VGS = 0V

P-Ch

—

-0.90 -1.6

TJ = 25°C, IS = -1.3A, VGS = 0V

N-Ch

—

100

P-Ch

—

100

N-Ch

—

120

P-Ch

—

180

ton

Forward Turn-On Time

N-P

V(BR)DSS

Drain-to-Source Breakdown Voltage

∆V

(BR)DSS/∆TJ

Breakdown Voltage Temp. Coefficient

RDS(ON)

Static Drain-to-Source On-Resistance

VGS(th)

Gate Threshold Voltage

gfs

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

Total Gate Charge

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain ("Miller") Charge

td(on)

Turn-On Delay Time

Rise Time

td(off)

Turn-Off Delay Time

Fall Time

Ciss

Imput Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Source-Drain Ratings and Characteristics

V/°C

Ω

µA

N-Channel

ID = 2.3A, VDS = 10V, VGS = 10V

P-Channel

ID = -2.3A, VDS = -10V, VGS = -10V

N-Channel

VDD = 20V, ID = 1.0A, RG = 6.0Ω,

RD = 20Ω

P-Channel

VDD = -20V, ID = -1.0A, RG = 6.0Ω,

RD = 20Ω

N-Channel

VGS = 0V, VDS = 15V, ƒ = 1.0MHz

P-Channel

VGS = 0V, VDS = -15V, ƒ = 1.0MHz

N-Ch

P-Ch

Continuous Source Current (Body Diode)

ISM

Pulsed Source Current (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

N-Channel

TJ = 25°C, IF = 1.25A, di/dt = 100A/µs

P-Channel

TJ = 25°C, IF = -1.25A, di/dt = 100A/µs

Intrinsic turn-on time is neglegible (turn-on is dominated by L S+LD)

N-Channel ISD ≤ 2.3A, di/dt ≤ 100A/µs, V DD ≤ V(BR)DSS, TJ ≤ 150°C

P-Channel ISD ≤ -2.3A, di/dt ≤ 50A/µs, V DD ≤ V(BR)DSS, TJ ≤ 150°C

Pulse width

≤ 300µs; duty cycle ≤ 2%.

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 23 )

Notes:

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