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L6207 Datasheet(PDF) 20 Page - STMicroelectronics

Part # L6207
Description  APPLICATION NOTE
PDF  53 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L6207 Datasheet(HTML) 20 Page - STMicroelectronics

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AN1762 APPLICATION NOTE
20/53
The time the device remains disabled is:
where
VEN(LOW) is the minimum voltage reached by the EN pin, and can be estimated with the relation:
The total intervention time is
where
tOCD(OFF), tOCD(ON), tD(ON)EN, tD(OFF)EN, and ROPDR are device intrinsic parameters, VDD is the pull-up voltage
applied to REN.
The external RC network, CEN in particular, must be chosen obtaining a reasonable fast OCD intervention (short
tDELAY) and a safe disable time (long tDISABLE). Figure 21 shows both tDISABLE and tDELAY as a function of CEN:
at least 100µs for tDISABLE are recommended, keeping the delay time below 1÷2µs at the same time.
The internal open drain can also be turned on if the device experiences an over temperature (OVT) condition.
The OVT will cause the device to shut down when the die temperature exceeds the OVT threshold
(TJ>165 °C typ.). Since the OVT is also connected directly to the gate drive circuits (see Figure 1 to Figure 3),
all the Power DMOS will shut down, even if
EN pin voltage is still over Vth(OFF). When the junction temperature
falls below the OVT turn-off threshold (150 °C typ.), the open drain turn off,
CEN is recharged up to VTH(ON) and
then the PowerDMOS are turned on back.
EN
ON
D
RISE
EN
OFF
OCD
DISABLE
t
t
t
t
)
(
)
(
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(
+
+
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)
(
)
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ln
ON
TH
DD
LOW
EN
DD
EN
EN
RISE
EN
V
V
V
V
C
R
t
−
−
⋅
⋅
=
EN
OPDR
OFF
OCD
EN
OFF
D
C
R
t
t
OFF
TH
LOW
EN
e
V
V
⋅
+
−
⋅
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)
(
)
(
)
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)
(
EN
OFF
D
FALL
EN
ON
OCD
DELAY
t
t
t
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)
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)
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)
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+
+
=
)
(
)
(
ln
OFF
TH
DD
EN
OPDR
FALL
EN
V
V
C
R
t
⋅
⋅
=



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