BSS64 datasheet(1/1 Pages) KEC

Part #	BSS64

Description	EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

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Manufacturer	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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1 / 1 page

1998. 6. 15

1/1

SEMICONDUCTOR

TECHNICAL DATA

BSS64

EPITAXIAL PLANAR NPN TRANSISTOR

Revision No : 1

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

MAXIMUM RATING (Ta=25 )

DIM

MILLIMETERS

1. EMITTER

2. BASE

3. COLLECTOR

SOT-23

A

B

C

D

E

2.93 0.20

1.30+0.20/-0.15

0.45+0.15/-0.05

2.40+0.30/-0.20

G

1.90

H

J

K

L

M

N

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

0.20 MIN

1.00+0.20/-0.10

M

E

1

2

3

B

1.30 MAX

LL

PP

P7

+_

ELECTRICAL CHARACTERISTICS (Ta=25 )

Type Name

Marking

Lot No.

U6

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

120

V

Collector-Emitter Voltage

VCEO

80

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

IC

100

mA

Emitter Current

IE

-100

mA

Collector Power Dissipation

PC

200

mW

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-65 150

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC=4mA, IB=0

80

-

V

Collector-Base Breakdown Voltage

V(BR)CBO

IC=100 A, IE=0

120

-

V

Emitter-Base Breakdown Voltage

V(BR)EBO

IE=100 A, IC=0

5.0

-

V

Collector Cut-off Current

ICBO

VCB=90V, IE=0

-

100

nA

VCB=90V, IE=0, Ta=150

-

50

A

Emitter Cut-off Current

IEBO

VEB=5V, IC=0

-

200

nA

DC Current Gain

hFE

VCE=1V, IC=1mA

-

60

-

VCE=1V, IC=4mA

20

-

VCE=1V, IC=10mA

-

80

-

VCE=1V, IC=20mA

-

55

-

Base-Emitter Saturation Voltage

VBE(sat)

IC=4mA, IB=0.4mA

-

1.2

V

Collector-Emitter Saturation Voltage

VCE(sat)

IC=4mA, IB=0.4mA

-

0.15

V

IC=50mA, IB=15mA

-

0.2

Transition Frequency

fT

VCE=10V, IC=4mA, f=100MHz

60

-

MHz

Collector Output Capacitance

Cob

VCB=10V, IE=0, f=1MHz

-

5.0

pF

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