KDR322 datasheet(1/2 Pages) KEC

Part #	KDR322

Description	SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)

PDF	2 Pages

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Manufacturer	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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1 / 2 page

2001. 12. 4

1/2

SEMICONDUCTOR

TECHNICAL DATA

KDR322

SILICON EPITAXIAL

SCHOTTKY BARRIER TYPE DIODE

Revision No : 2

LOW VOLTAGE HIGH SPEED SWITCHING.

FEATURES

Low Forward Voltage : VF=0.54V (Typ.).

Low Reverse Current : IR=5 A (Max.).

Small Package : USM.

MAXIMUM RATING (Ta=25 )

DIM

MILLIMETERS

A

B

D

E

1. N.C

2. ANODE

3. CATHODE

USM

2.00 0.20

1.25 0.15

0.90 0.10

0.3+0.10/-0.05

2.10 0.20

0.65

0.15+0.1/-0.06

1.30

0.00-0.10

0.70

C

G

H

J

K

L

K

1

3

2

E

B

D

H

MM

N

M

0.42 0.10

N

0.10 MIN

3

2

1

+_

ELECTRICAL CHARACTERISTICS (Ta=25 )

Marking

U L

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Forward Voltage

VF (1)

IF=1mA

-

0.28

-

V

VF (2)

IF=10mA

-

0.36

-

VF (3)

IF=100mA

-

0.54

0.60

Reverse Current

IR

VR=40V

-

5

A

Total Capacitance

CT

VR=0, f=1MHz

-

18

25

pF

CHARACTERISTIC

SYMBOL

RATING

UNIT

Maximum (Peak) Reverse Voltage

VRM

45

V

Reverse Voltage

VR

40

V

Maximum (Peak) Forward Current

IFM

300

mA

Average Forward Current

IO

100

mA

Power Dissipation

PD

100

mW

Junction Temperature

Tj

125

Storage Temperature Range

Tstg

-55 125

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