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AN2838 Datasheet(PDF) 14 Page - STMicroelectronics |
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AN2838 Datasheet(HTML) 14 Page - STMicroelectronics |
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14 / 23 page ![]() Thermal measurements AN2838 14/23 DocID15099 Rev 2 4 Thermal measurements To check the reliability of the design, thermal mapping by means of an IR camera was carried out. Figure 20 and Figure 21 show thermal measurements on the component side of the board at nominal input voltages and full load. Some pointers visible on the pictures placed across key components show the relevant temperature. Table 1 provides the correlation between the measured points and components, for both thermal maps. The ambient temperature during both measurements was 27 °C. According to these measurement results, all components on the board function within their temperature limits. Figure 20. Thermal map at 90 VAC - full load Figure 21. Thermal map at 265 VAC - full load Table 2. Measured temperature @ 90 VAC and 265 VAC - full load Component Temperature @ 90 VAC Temperature @ 265 VAC MOSFET Q1 57.8 °C 43.8 °C Secondary diode D5 58.9 °C 58.1 °C Diode bridge D1 65.9 °C 45.6 °C Transformer TR1 (bobbin) 64.3 °C 65.1 °C Transformer TR1 (core) 54.5 °C 55 °C Choke T1 55.7 °C 36. 2 °C Choke T2 56 °C 38.2 °C Transil D2 70 °C 59 °C |
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