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RH6200M Datasheet(PDF) 3 Page - Linear Technology |
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RH6200M Datasheet(HTML) 3 Page - Linear Technology |
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3 / 10 page ![]() RH6200M 3 rh6200mfa (Postirradiation) TA = 25°C Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: Inputs are protected by back-to-back diodes. If the differential input voltage exceeds 0.7V, the input current must be limited to less than 40mA. Note 3: A heat sink may be required to keep the junction temperature below the absolute maximum rating when the output is shorted indefinitely. Note 4: There are reverse-biased ESD diodes from all inputs and outputs to the respective supply pins. If these pins are forced beyond either supply, unlimited current will flow through these diodes. If the current is transient in nature and limited to less than 30mA, no damage to the device will occur. TABLE 1A: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS 10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si) UNITS MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX VOS Input Offset Voltage VS = 5V, 0V; VCM = V– to V+ VS = ±5V; VCM = V– to V+ 2.2 6.5 2.4 7 2.6 7.5 2.8 8 3 8.5 mV mV IB Input Bias Current VS = 5V, 0V, VCM = V+ VS = 5V, 0V, VCM = V– VS = ±5V, VCM = V+ VS = ±5V, VCM = V– –55 –55 20 20 –60 –60 22 22 –65 –65 24 24 –70 –70 26 26 –75 –75 28 28 μA μA μA μA IOS Input Offset Current VS = 5V, 0V; VCM = V+ VS = 5V, 0V; VCM = V– VS = ±5V; VCM = V+ VS = ±5V; VCM = V– 5 6 8 13 6 7 9 14 7 8 10 15 8 9 11 16 9 10 12 17 μA μA μA μA AVOL Large Signal Open Loop Voltage Gain VS = 5V, 0V; RL = 1k; VOUT = 0.5V to 4.5V VS = 5V, 0V; RL = 100Ω; VOUT = 1V to 4V VS = ±5V; RL = 1k; VOUT = ±4.5V VS = ±5V; RL = 100Ω; VOUT = ±2V 65 10 110 13.5 60 9 100 12 55 8 90 10.5 50 7 80 9 45 6 70 7.5 V/mV V/mV V/mV V/mV CMRR Common Mode Rejection Ratio VS = 5V, 0V; VCM = 0V to 5V VS = 5V, 0V; VCM = 1.5V to 3.5V VS = ±5V; VCM = ±5V VS = ±5V; VCM = ±2V 64 84 67 74 63 83 66 73 62 82 65 72 61 81 64 71 60 80 63 70 dB dB dB dB PSRR Power Supply Rejection Ratio VS = ±2.25V to ±5V 59 58 57 56 55 dB VOL Output Voltage Swing Low VS = 5V, 0V; IL = 0 VS = 5V, 0V; IL = 5mA VS = 5V, 0V; IL = 20mA VS = ±5V; IL = 0 VS = ±5V; IL = 5mA VS = ±5V; IL = 20mA 52 104 296 52 114 296 54 108 302 54 118 302 56 112 308 56 122 308 58 116 314 58 126 314 60 120 320 60 130 320 mV mV mV mV mV mV VOH Output Voltage Swing High VS = 5V, 0V; IL = 0 VS = 5V, 0V; IL = 5mA VS = 5V, 0V; IL = 20mA VS = ±5V; IL = 0 VS = ±5V; IL = 5mA VS = ±5V; IL = 20mA 114 198 415 134 218 430 118 206 430 138 226 455 122 214 445 142 234 47 0 126 222 460 146 242 485 130 230 475 150 250 500 mV mV mV mV mV mV ISC Short-Circuit Current VS = 5V, 0V or VS = ±5V 58 56 54 52 50 mA IS Supply Current VS = 5V, 0V VS = ±5V 20.4 23.4 20.8 23.8 21.2 24.2 21.6 24.6 22 25 mA mA IS(SHDN) Shutdown Supply Current VS = 5V, 0V VS = ±5V 1.84 2.14 1.88 2.18 1.92 2.22 1.96 2.26 2 2.3 mA mA ISHDN Shutdown Pin Current VS = 5V, 0V or VS = ±5V; VSHDN = 0.3V –284 –288 –292 –296 –300 μA Note 5: The RH6200 is tested under pulse load conditions such that TJ ≈ TA. The thermal resistance of the W 10-lead CERPAC package (without heat sink) is estimated at 170°C/W. For a given application, multiply the RMS power dissipation of the RH6200 times the package thermal resistance (including any heat sinking if present) to calculate the temperature difference between the ambient temperature and the junction temperature. The RH6200 has a thermal shutdown feature that protects the part from excessive junction temperature. The amplifier will shut down to an inactive, low current condition when the junction temperature exceeds approximately 160°C. The amplifier will remain shut down until the die cools off to below approximately 150°C, at which point the amplifier will return to normal operation. Note 6: This parameter is not production tested. Typical bench evaluation performance listed for information only. |
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