CONTROL SECTION

VBIAS Quiescent Current

VBIAS Operating Current

Undervoltage Threshold (Falling)

Undervoltage Threshold (Rising)

Low Level Input Voltage

High Level Input Voltage

Low Level Input Current

High Level Input Current

OUTPUT BRIDGE

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Drain-Source On Resistance (Each FET)

Drain-Source On Resistance

(Each FET, For Thermal Calculations Only)

SWITCHING CHARACTERISTICS

Rise Time

Fall Time

Turn-On Prop Delay (Lower)

Turn-Off Prop Delay (Lower)

Turn-On Prop Delay (Upper)

Turn-Off Prop Delay (Upper)

Dead Time

Dead Time

SOURCE-DRAIN DIODE CHARACTERISTICS

Forward Voltage

Reverse Recovery Time

High Voltage Supply

Bias Supply

Logic Input Voltages

Continuous Output Current

Peak Output Current

Thermal Resistance MOSFETS @ 125°C

Storage Temperature Range

Lead Temperature Range

(10 Seconds)

Case Operating Temperature

MSK4301H

MSK4301

Junction Temperature

-3V transient to +75V

-0.3V to +16V

29A

41A

-3V transient to +75V

-3V transient to +3V

ABSOLUTE MAXIMUM RATINGS

V+

VBIAS

AØ, BØ, CØ

RSENSE

0.8°C/W

-65°C to +150°C

+300°C

-55°C to +125°C

-40°C to +85°C

+150°C

Typ.

2.5

20

6.6

7.1

-

-

100

-

-

-

-

120

81

0.5

5

5

0.5

5.0

1.0

1.05

120

mAmp

mAmp

Volts

Volts

Volts

Volts

µAmp

µAmp

V

µAmp

Ω

nSec

nSec

µSec

µSec

µSec

µSec

µSec

µSec

Volts

nSec

Parameter

ELECTRICAL SPECIFICATIONS

Units

Max.

8

25

7.6

8.1

0.8

-

135

+1

-

250

0.022

-

-

3

10

10

3

7.0

1.2

1.30

-

MSK4301

Min.

-

-

5.6

6.1

-

2.7

60

-1

75

-

-

-

-

-

-

-

-

3.0

0.3

-

-

Test Conditions

2

Typ.

2.5

20

6.6

7.1

-

-

100

-

-

-

-

120

81

0.5

5

5

0.5

5.0

1.0

1.05

120

Max.

8

25

7.6

8.1

0.8

-

135

+1

-

250

0.022

-

-

2

8

8

2

7.0

1.2

1.30

-

Min.

-

-

5.6

6.1

-

2.7

60

-1

75

-

-

-

-

-

-

-

-

3.0

0.3

-

-

1,2,3

1,2,3

1

1

-

-

-

-

-

-

1

-

-

4

4

4

4

4

4

-

-

Guaranteed by design but not tested. Typical parameters are representative of actual device performance but are for reference only.

Industrial devices shall be tested to subgroups 1 and 4 unless otherwise specified.

Military grade devices ("H" Suffix) shall be 100% tested to Subgroups 1, 2, 3 and 4.

Subgroups 5 and 6 testing available upon request.

Subgroup 1, 4 TA = TC = +25°C

2, 5 TA = TC = +125°C

3, 6 TA = TC = -55°

Continuous operation at or above absolute maximum ratings may adversly effect the device performance and/or life cycle.

When applying power to the device, apply the low voltage followed by the high voltage or alternatively, apply both at the same time

Do not apply high voltage without low voltage present.

Internal solder reflow temperature is 180°C, do not exceed.

1

-

Ω

0.013

0.013

-

-

-

-

MSK4301H

6

7

NOTES

NOTES:

8

1

1

1

1

1

1

1

1

1

1

1

1

1

All Inputs Off

f=20KHz, 50% Duty Cycle

V+=28V

SWR=12K

1

GroupA

Subgroup

4

3

2

1

2

3

4

5

6

7

8

8548-71 Rev. J 1/15