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LTC4358 Datasheet(PDF) 3 Page - Linear Technology |
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LTC4358 Datasheet(HTML) 3 Page - Linear Technology |
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3 / 12 page ![]() LTC4358 3 4358fa ELECTRICAL CHARACTERISTICS Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VOUT = VDD, VDD = 9V to 26.5V, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS VDD Operating Supply Range l 926.5 V IDD Operating Supply Current l 0.6 mA IIN IN Pin Current VIN = VOUT ± 1V, No Load l 150 350 450 μA IOUT OUT Pin Current VIN = VOUT ± 1V, No Load l 80 160 μA IDRAIN DRAIN Pin Current VIN = 0V, VOUT = VDD = VDRAIN = 26.5V l 5 150 μA μA ΔVGATE N-Channel Gate Drive (VGATE – VIN)VDD, VOUT = 9V to 26.5V l 4.5 15 V IGATE(UP) N-Channel Gate Pull Up Current VGATE = VIN, VIN – VOUT = 0.1V l –14 –20 –26 μA IGATE(DOWN) N-Channel Gate Pull Down Current in Fault Condition VGATE = VIN + 5V l 12 A tON Turn-On Time VIN – VOUT = –1V –| – 0.1V, VDRAIN = VIN, VOUT = VDD, VGATE – VIN > 4.5V l 200 500 μs tOFF Turn-Off Time VIN – VOUT = 55mV –| – –1V, VDRAIN = VIN, VOUT = VDD, VGATE – VIN < 1V l 300 500 ns ΔVSD Source-Drain Regulation Voltage (VIN – VOUT) 1mA < IIN < 100mA l 10 25 55 mV ΔVSD Body Diode Forward Voltage Drop IIN = 5A, MOSFET Off l 0.6 0.8 1 V RDS(ON) Internal N-Channel MOSFET On Resistance IIN = 5A l 20 40 mΩ Note 2: All currents into pins are positive, all voltages are referenced to GND unless otherwise specified. Note 3: An internal clamp limits the GATE pin to a minimum of 6V above IN. Driving this pin to voltages beyond this clamp may damage the device. |
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