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KTC802E Datasheet(PDF) 1 Page - KEC(Korea Electronics) |
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KTC802E Datasheet(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 3 page  2002. 2. 20 1/3 SEMICONDUCTOR TECHNICAL DATA KTC802E EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 1 GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES High Current. Low VCE(sat) . : VCE(sat) 250mV at IC=200mA/IB=10mA. Complementary to KTA702E. MAXIMUM RATINGS (Ta=25 ) DIM MILLIMETERS A A1 B1 C TES6 1.6 0.05 1.0 0.05 1.6 0.05 1.2 0.05 0.50 0.2 0.05 0.5 0.05 0.12 0.05 B D H J B1 B 1 2 3 6 4 P P P5 5 +_ +_ +_ +_ +_ +_ +_ 1. Q EMITTER 2. Q BASE 3. Q COLLECTOR 4. Q EMITTER 5. Q BASE 6. Q COLLECTOR 1 1 1 2 2 2 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 15 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 6 V Collector Current IC 500 mA ICP (Note) 1 A Collector Power Dissipation PC * 200 mW Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 1 Q1 Q2 23 65 4 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=15V, IE=0 - - 100 nA Collector-Base Breakdown Voltage V(BR)CBO IC=10 A 15 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA 12 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A 6 - - V DC Current Gain hFE VCE=2V, IC=10mA 270 - 680 - Collector-Emitter Saturation Voltage VCE(sat) IC=200mA, IB=10mA - 90 250 mV Transition Frequency fT VCE=2V, IC=10mA, fT=100MHz - 320 - MHz Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 7.5 - pF Note : Single pulse Pw=1mS. * Total Rating. EQUIVALENT CIRCUIT (TOP VIEW) L Z Type Name 12 3 4 6 5 Marking |
Similar Part No. - KTC802E |
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Similar Description - KTC802E |
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