C945P datasheet(1/2 Pages) KEC

Part #	C945P

Description	EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

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Manufacturer	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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1 / 2 page

2001. 9. 14

1/2

SEMICONDUCTOR

TECHNICAL DATA

KTC945

EPITAXIAL PLANAR NPN TRANSISTOR

Revision No : 2

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

FEATURES

Excellent hFE Linearity.

: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)

Low Noise : NF=1dB(Typ.). at f=1kHz

Complementary to KTA733.

MAXIMUM RATING (Ta=25 )

TO-92

DIM

MILLIMETERS

A

B

C

D

F

G

H

J

K

L

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

0.85

0.45

14.00 0.50

0.55 MAX

2.30

D

1

2

3

B

K

G

H

F

E

C

E

N

0.45 MAX

M

1.00

N

1. EMITTER

2. COLLECTOR

3. BASE

+_

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

IC

150

mA

Collector Power Dissipation

PC

625

mW

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-55 150

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector-Base Breakdown Voltage

V(BR)CBO

IC=100 A, IE=0

60

-

V

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC=1mA, IB=0

50

-

V

Emitter-Base Breakdown Voltage

V(BR)EBO

IE=100 A, IC=0

5

-

V

Collector Cut-off Current

ICBO

VCB=60V, IE=0

-

0.1

A

Emitter Cut-off Current

IEBO

VEB=5V, IC=0

-

0.1

A

DC Current Gain

hFE (Note)

VCE=6V, IC=2mA

90

-

600

Collector-Emitter Saturation Voltage

VCE(sat)

IC=100mA, IB=10mA

-

0.1

0.25

V

Base-Emitter Saturation Voltage

VBE(sat)

IC=100mA, IB=10mA

-

1.0

V

Transition Frequency

fT

VCE=10V, IC=10mA

80

300

-

MHz

Collector Output Capacitance

Cob

VCB=10V, IE=0, f=1MHz

-

2.0

3.5

pF

Noise Figure

NF

VCE=6V, IC=0.1mA Rg=10k , f=1kHz

-

1.0

10

dB

Note : hFE Classification

R:90 180, Q:135 270,

P:200 400,

K:300 600

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