KTK211 datasheet(1/3 Pages) KEC

Part #	KTK211

Description	N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (HIGH FREQUENCY, VHF BAND AMPLIFIER)

PDF	3 Pages

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Manufacturer	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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1 / 3 page

2003. 2. 25

1/3

SEMICONDUCTOR

TECHNICAL DATA

KTK211

N CHANNEL JUNCTION FIELD

EFFECT TRANSISTOR

Revision No : 2

HIGH FREQUENCY APPLICATION.

VHF BAND AMPLIFIER APPLICATION.

FEATURES

Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).

High Forward Transfer Admittance.

: |yfs| =9mS(Typ.)

Extremely Low Reverse Transfer Capacitance.

: Crss=0.1pF(Typ.)

MAXIMUM RATING (Ta=25 )

DIM

MILLIMETERS

1. GATE

2. DRAIN

3. SOURCE

SOT-23

A

B

C

D

E

2.93 0.20

1.30+0.20/-0.15

0.45+0.15/-0.05

2.40+0.30/-0.20

G

1.90

H

J

K

L

M

N

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

0.20 MIN

1.00+0.20/-0.10

M

E

1

2

3

B

1.30 MAX

LL

PP

P7

+_

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

SYMBOL

RATING

UNIT

Gate-Drain Voltage

VGDO

-18

V

Gate Current

IG

10

mA

Drain Power Dissipation

PD

150

mW

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-55 150

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Gate Leakage Current

IGSS

VGS=-0.5V, VDS=0

-

-10

nA

Gate-Drain Breakdown Voltage

V(BR)GDO

IG=-100 A

-18

-

V

Drain Current

IDSS (Note)

VGS=0, VDS=10V

1.0

-

15

mA

Gate-Source Cut-off Voltage

VGS(OFF)

VDS=10V, ID=1 A

-0.4

-

-4.0

V

Foward Transfer Admittance

|yfs|

VDS=10V, VGS=0, f=1kHz

-

9

-

mS

Reverse Transfer Capacitance

Crss

VGD=-10V, f=1MHz

-

0.10

0.15

pF

Power Gain

GPS

VDD=10V, f=100MHz (Fig.)

-

18

-

dB

Noise Figure

NF

VDD=10V, f=100MHz (Fig.)

-

2.5

3.5

dB

Note : IDSS Classification

O:1.0 3.0, Y:2.5 6.0,

GR(G):5.0 10.0, BL(B):9.0 15.0

I

Rank

Type Name

Marking

Lot No.

K

DSS

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