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MPS8050 Datasheet(PDF) 1 Page - KEC(Korea Electronics) |
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MPS8050 Datasheet(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 2 page  1999. 10. 25 1/2 SEMICONDUCTOR TECHNICAL DATA MPS8050 EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 1 HIGH CURRENT APPLICATION. FEATURE Complementary to MPS8550. MAXIMUM RATING (Ta=25 ) TO-92 DIM MILLIMETERS A B C D F G H J K L 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 MAX 2.30 D 1 2 3 B K G H F F E C E N 0.45 MAX M 1.00 N 1. EMITTER 3. COLLECTOR 2. BASE +_ ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=35V, IE=0 - - 100 nA Emitter Cut-off Current IEBO VEB=6V, IC=0 - - 100 nA Collector-Base Breakdown Voltage V(BR)CBO IC=100 A, IE=0 40 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=2mA, IB=0 25 - - V DC Current Gain hFE(1) VCE=1V, IC=5mA 45 135 - hFE(2) (Note) VCE=1V, IC=100mA 85 160 300 hFE(3) VCE=1V, IC=800mA 40 110 - Collector-Emitter Saturation Voltage VCE(sat) IC=800mA, IB=80mA - 0.28 0.5 V Base-Emitter Saturation Voltage VBE(sat) IC=800mA, IB=80mA - 0.98 1.2 V Base-Emitter Voltage VBE VCE=1V, IC=10mA - 0.66 1.0 V Transition Frequency fT VCE=10V, IC=50mA 100 190 - MHz Collector Output Capacitance Cob VCB=10V, f=1MHz, IE=0 - 9 - pF CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V Collector Current IC 1.5 A Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : hFE(2) Classification B:85 160 , C : 120 200 , D : 160 300 |
Similar Part No. - MPS8050 |
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Similar Description - MPS8050 |
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