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UM1494 Datasheet(PDF) 13 Page - STMicroelectronics |
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UM1494 Datasheet(HTML) 13 Page - STMicroelectronics |
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13 / 23 page ![]() UM1494 Triac control Doc ID 022519 Rev 1 13/23 4 Triac control 4.1 Maximum allowed load current Maximum allowed current depends on the ability of the device to dissipate the energy into ambient to keep the junction of the device at 125 °C (150 °C for high temperature Triac). Refer also to AN533. Dissipated power for full wave operation is given by: Equation 1 Dissipated power estimation where Vto (V) and Rd (Ω) values are given by the AC switch datasheets. Maximum junction temperature of the device is then: Equation 2 Maximum junction temperature estimation where Tamb (°C) is ambient temperature, and Rth(j-a) (°C/W) is junction to ambient thermal resistance. Thermal resistance consists of one part in the case of SMD package and is defined in the datasheet depending on the PCB heatsink area. Table 2 gives the maximum RMS current each ACS/Triac can control, at maximum ambient temperature 60 °C, to keep junction temperature below max. allowed value. Dissipated power during the ON state (PD) is given for indication. Higher load current can be controlled using forced cooling. The AN533 is dedicated for a full description of thermal management. 4.2 Gate current width and minimum load current Gate current pulse is generated by the MCU. The length of the pulse is set by software and can be changed separately for each load. Gate current pulse length is an important value to be set according to minimum load current. Load current must reach latching current level to keep Triac ON before the gate pulse is removed. Latching current (IL) is specified in the AC switch datasheet. It is important to check for low power loads when RMS current is low as it takes a longer time for the load current to reach latching current level. When gate current is Table 2. Maximum load RMS current for Tamb = 60 °C AC switch Package PCB heatsink (cm2) Rth(j-a) (°C/W) RMS current (A) PD (W) ACS108 SMBFlat 1 115 0.56 0.55 T1010H-6G D2PAK 3 40 2.6 2.15 P d V to l RM S R d lRMS 2 ) ( + • = T j T amb P d R th j a – () • + = |
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