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B0540WRF Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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B0540WRF Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 5 page ![]() - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Packing code with suffix "G" means green compound (halogen-free) - Case: Bend lead SOD-123 small outline plastic package - Polarity: Indicated by cathode band - Weight: 0.01 g (approximately) SYMBOL UNIT PD mW VRRM V VR V IO mA IFSM A RθJA oC/W TJ , TSTG oC Notes: 1. Test Condition: 8.3ms single half sine-wave superimposed on rated load Notes: 2. Valid provided that electrodes are kept at ambient temperature SYMBOL UNIT IR=250μA IR=130μA IR=20μA IF=100mA IF=500mA IF=1000mA VR = 10V VR = 15V VR = 20V VR = 30V VR = 40V VR = 0 V CJ pF Document Number: DS_S1412004 Version: H14 Taiwan Semiconductor Small Signal Product Low VF SMD Schottky Barrier Diode FEATURES Thermal Resistance (Junction to Ambient) (Note 2) 14 21 Repetitive Peak Reverse Voltage Mean Forward Current @ TL=100 oC (Lead Temperature) Non-Repetitive Peak Forward Surge Current (Note 1) solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed : 260°C/10s 0.375 30 - MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER Reverse Breakdown Voltage (Minimum Value) 40 - Reverse Voltage - - 0.620 VF Forward Voltage (Maximum Value) TJ = 25 oC B0520LW,B0530W,B0540W Junction and Storage Temperature Range Power Dissipation PARAMETER B0520LW B0530W B0540W SOD-123 MECHANICAL DATA - Terminal: Matte tin plated, lead free, V B0520LW B0530W B0540W - 410 5.5 500 20 V μA 28 40 30 20 -55 to +125 244 10 - - -- - 0.385 0.430 0.510 - 75 - -- 20 - 20 - 250 - Junction Capacitance TJ = 25 oC f=1.0MHz - V(BR) 0.300 170 Reverse Leakage Current (Maximum Value) 130 IR |
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