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LL41-GS18 Datasheet(PDF) 1 Page - Vishay Siliconix |
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LL41-GS18 Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 5 page  LL41 www.vishay.com Vishay Semiconductors Rev. 1.7, 09-May-12 1 Document Number: 85671 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Schottky Diode MECHANICAL DATA Case: MiniMELF SOD-80 Weight: approx. 31 mg Cathode band color: black Packaging codes/options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/2.5K per 7" reel (8 mm tape), 12.5K/box FEATURES • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage • This device is protected by a PN junction guardring against excessive voltage, such as electrostatic discharges • This diode is also available in the DO-35 case with type designation BAT41 • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Note (1) Valid provided that electrodes are kept at ambient temperature Note (1) Valid provided that electrodes are kept at ambient temperature Note (1) Pulse test, tp = 300 μs PARTS TABLE PART ORDERING CODE INTERNAL CONSTRUCTION REMARKS LL41 LL41-GS18 or LL41-GS08 Single diode Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage VRRM 100 V Forward continuous current (1) IF 100 mA Repetitive peak forward current (1) tp < 1 s, < 0.5 IFRM 350 mA Surge forward current (1) tp = 10 ms IFSM 750 mA Power dissipation (1) Tamb = 65 °C Ptot 200 mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air RthJA 300 (1) K/W Junction temperature Tj 125 °C Ambient operating temperature range Tamb - 65 to + 125 °C Storage temperature range Tstg - 65 to + 150 °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Reserve breakdown voltage (1) IR = 100 μA V(BR) 100 110 V Leakage current (1) VR = 50 V, Tj = 25 °C IR 100 nA VR = 50 V, Tj = 100 °C IR 20 μA Forward voltage (1) IF = 1 mA VF 400 450 mV IF = 200 mA VF 1000 mV Diode capacitance VR = 1 V, f = 1 MHz CD 2pF |
Similar Part No. - LL41-GS18 |
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Similar Description - LL41-GS18 |
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