SS8P2CL, SS8P3CL

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Vishay General Semiconductor

Revision: 16-Jan-14

1

Document Number: 89030

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

High Current Density Surface Mount

Schottky Barrier Rectifier

FEATURES

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency

• Low thermal resistance

• Meets MSL level 1, per J-STD-020

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters, freewheeling

diodes,

DC/DC

converters,

and

polarity

protection

application.

MECHANICAL DATA

Case: TO-277A (SMPC)



Molding compound meets UL 94 V-0 flammability rating

Base

P/N-M3

-

halogen-free,

RoHS-compliant,

and

commercial grade



Base

P/NHM3

-

halogen-free,

RoHS-compliant,

and

automotive grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

PRIMARY CHARACTERISTICS

2 x 4.0 A

20 V, 30 V

120 A

20 mJ

0.41 V

150 °C

Package

TO-277A

Diode variations

Single

TO-277A (SMPC)

K

2

1

Anode 1

Anode 2

Cathode

K

Available

PARAMETER

SYMBOL

SS8P2CL

SS8P3CL

UNIT

Device marking code

S82C

S83C

Maximum repetitive peak reverse voltage

20

30

V

Maximum average forward rectified current (fig. 1)

total device

8.0

A

per diode

4.0

Peak forward surge current 10 ms single half sine-wave



superimposed on rated load

120

A

20

mJ

Operating junction and storage temperature range

-55 to +150

°C