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FR103G Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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FR103G Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 4 page  CREAT BY ART Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss FR101G DO-41 3K / AMMO box Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Symbol FR 101G FR 102G FR 103G FR 104G FR 105G FR 106G FR 107G Units VRRM 50 100 200 400 600 800 1000 V VRMS 35 70 140 280 420 560 700 V VDC 50 100 200 400 600 800 1000 V IF(AV) A uA uA Trr 250 nS Cj pF RθJA OC/W TJ OC TSTG OC Version:E13 Maximum Instantaneous Forward Voltage (Note 1) @ 1 A VF 1.3 Weight: 0.34 grams Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Recurrent Peak Reverse Voltage INNER TAPE Storage Temperature Range 5 100 Maximum Reverse Recovery Time (Note 2) Maximum DC Reverse Current at @ TA=25 ℃ Rated DC Blocking Voltage @ TA=125 ℃ 500 10 Cases: Molded plastic Green compound with suffix "G" on packing code & prefix "G" on datecode Lead: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed Epoxy: UL 94V-0 rate flame retardant Features Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. 70 Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 30 Operating Temperature Range IFSM Typical Thermal Resistance - 55 to + 150 Typical Junction Capacitance (Note 3) IR FR101G - FR107G 1.0AMP Glass Passivated Fast Recovery Rectifiers DO-41 Polarity: Color band denotes cathode end Mechanical Data A Ordering Information (example) Part No. Package Packing Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle - 55 to + 150 V 150 Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) Packing code Packing code (Green) 52mm A0 High temperature soldering guaranteed: 260℃/10s Maximum Average Forward Rectified Current 1 A0G Parameter |
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