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LT1173CS8 Datasheet(PDF) 11 Page - Linear Technology |
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LT1173CS8 Datasheet(HTML) 11 Page - Linear Technology |
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11 / 16 page ![]() LT1173 11 S APPLICATI I FOR ATIO Using the Gain Block The gain block (GB) on the LT1173 can be used as an error amplifier, low battery detector or linear post regulator. The gain block itself is a very simple PNP input op amp with an open collector NPN output. The negative input of the gain block is tied internally to the 1.245V reference. The posi- tive input comes out on the SET pin. Arrangement of the gain block as a low battery detector is straightforward. Figure 12 shows hookup. R1 and R2 need only be low enough in value so that the bias current of the SET input does not cause large errors. 100k Ω for R2 is adequate. R3 can be added to introduce a small amount of hysteresis. This will cause the gain block to “snap” when the trip point is reached. Values in the 1M-10M range are optimal. The addition of R3 will change the trip point, however. Table 1. Component Selection for Common Converters INPUT OUTPUT OUTPUT CIRCUIT INDUCTOR INDUCTOR CAPACITOR VOLTAGE VOLTAGE CURRENT (MIN) FIGURE VALUE PART NUMBER VALUE NOTES 2.0-3.1 5 90mA 5 47 µH G GA10-472K, C CTX50-1 100 µF* 2.0-3.1 5 10mA 5 220 µH G GA10-223K, C CTX 22 µF 2.0-3.1 12 50mA 5 47 µH G GA10-472K, C CTX50-1 47 µF* 2.0-3.1 12 10mA 5 150 µH G GA10-153K 22 µF 5 12 90mA 5 120 µH G GA10-123K 100 µF 5 12 30mA 5 150 µH G GA10-153K 47 µF** 5 15 50mA 5 120 µH G GA10-123K C CTX100-4 47 µF 5 30 25mA 5 100 µH G GA10-103K, C CTX100-4 10 µF, 50V 6.5-9.5 5 50mA 6 47 µH G GA10-472K, C CTX50-1 100 µF** 12-20 5 300mA 6 220 µH G GA20-223K 220 µF** 20-30 5 300mA 6 470 µH G GA20-473K 470 µF** 5 –5 75mA 7 100 µH G GA10-103K, C CTX100-4 100 µF** 12 –5 250mA 7 470 µH G GA40-473K 220 µF** –5 5 150mA 8 100 µH G GA10-103K, C CTX100-4 220 µF –5 12 75mA 8 100 µH G GA10-103K, C CTX100-4 47 µF G = Gowanda C = Coiltronics * Add 68 Ω from ILIM to VIN ** Add 100 Ω from ILIM to VIN LT1173 • TA16 VBAT R1 R2 1.245V REF SET GND IN V LT1173 100k +5V TO PROCESSOR R1 = VLB – 1.245V 11.7 µA VLB + – AO R3 = BATTERY TRIP POINT R2 = 100k Ω R3 = 4.7M Ω Figure 12. Setting Low Battery Detector Trip Point |
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