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HT11G Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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HT11G Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 4 page ![]() CREAT BY ART - Glass passivated chip junction - High current capability - High reliability - High surge current capability - High efficiency, Low VF - Halogen-free according to IEC 61249-2-21 definition Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test VRRM 50 100 200 300 400 600 800 1000 V VRMS 35 70 140 210 280 420 560 700 V VDC 50 100 200 300 400 600 800 1000 V IF(AV) A Trr ns Cj pF RθJA OC/W TJ OC TSTG OC Document Number: DS_D1407005 Version: F14 HT11G thru HT18G Taiwan Semiconductor Glass Passivated High Efficient Rectifiers FEATURES - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Maximum repetitive peak reverse voltage MECHANICAL DATA Case: TS-1 Weight: 0.2g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) PARAMETER SYMBOL HT 11G HT 12G HT 13G 30 HT 14G HT 15G HT 16G HT 18G UNIT A Maximum instantaneous forward voltage (Note 1) @ 1 A VF V Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 1 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM Maximum reverse current @ rated VR TJ=25 oC TJ=125 oC IR 5 μA 150 Typical junction capacitance (Note 3) 15 10 75 Typical thermal resistance 95 Operating junction temperature range - 55 to +150 Storage temperature range - 55 to +150 Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Note 1: Pulse test with PW=300μs, 1% duty cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A HT 17G TS-1 1.0 1.3 1.7 Maximum reverse recovery time (Note 2) 50 |
Similar Part No. - HT11G_14 |
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Similar Description - HT11G_14 |
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