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MBR10150 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # MBR10150
Description  Schottky Barrier Rectifier
PDF  4 Pages
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

MBR10150 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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CREAT BY ART
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
VRRM
35
45
50
60
90
100
150
200
V
VRMS
24
31
35
42
63
70
105
140
V
VDC
35
45
50
60
90
100
150
200
V
IF(AV)
A
IRRM
A
dV/dt
V/μs
RθJC
OC/W
TJ
OC
TSTG
OC
Document Number: DS_D1308050
Version: L13
MBR1035 thru MBR10200
Taiwan Semiconductor
Schottky Barrier Rectifier
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
TO-220AC
MECHANICAL DATA
Case:
TO-220AC
Polarity:
As marked
Mounting torque:
5 in-lbs maximum
Weight:
1.88 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
MBR
1035
MBR
1045
MBR
1050
MBR
1060
MBR
1090
MBR
10100
MBR
10150
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
A
Peak repetitive reverse surge current (Note 1)
1.0
Maximum average forward rectified current
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz)
IFRM
A
Maximum instantaneous forward voltage (Note 2)
IF=10A, TJ=25℃
IF=10A, TJ=125℃
VF
V
0.70
0.80
0.85
0.57
Typical thermal resistance
Operating junction temperature range
- 55 to +150
Maximum reverse current @ rated VR TJ=25 ℃
TJ=125 ℃
IR
mA
15
10
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
MBR
10200
10
20
150
0.5
Voltage rate of change (Rated VR)
- 55 to +175
1.05
-
0.1
6
3
10000
0.70
0.71


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