PART NO.

PART NO.

MBRF10H100CT

MBRF10H100CT

MBRF10H100CT

(TA=25℃ unless otherwise noted)

Document Number: DS_D1309015

Version: H13

MBRF10H100CT thru MBRF10H200CT

Taiwan Semiconductor

ORDERING INFORMATION

AEC-Q101

QUALIFIED

PACKING CODE GREEN COMPOUND

CODE

PACKAGE

PACKING

EXAMPLE

PREFERRED P/N

AEC-Q101

QUALIFIED

PACKING CODE

GREEN COMPOUND

CODE

DESCRIPTION

MBRF10H100CT C0

C0

C0

G

Green compound

MBRF10H100CTHC0

H

C0

AEC-Q101 qualified

RATINGS AND CHARACTERISTICS CURVES

50 / Tube

Note 1: "xxx" defines voltage from 100V (MBRF10H100CT) to 200V (MBRF10H200CT)

MBRF10HxxxCT

(Note 1)

Prefix "H"

C0

Suffix "G"

ITO-220AB

MBRF10H100CT C0G

0

2

4

6

8

10

12

50

75

100

125

150

175

FIG.1 FORWARD CURRENT DERATING CURVE

RESISTIVE OR

INDUCTIVELOAD

WITH HEATSINK

0

30

60

90

120

150

180

1

10

100

NUMBER OF CYCLES AT 60 Hz

FIG. 2 MAXIMUM NON-REPETITIVE FORWARD

SURGE CURRENT

8.3ms Single Half Sine Wave

JEDEC Method

0.0001

0.001

0.01

0.1

1

10

0

20

40

60

80

100

120

140

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

FIG. 4 TYPICAL REVERSE CHARACTERISTICS

TJ=75℃

TJ=125℃

TJ=25℃

0.1

1

10

100

0.6

0.7

0.8

0.9

1

1.1

1.2

1.3

FORWARD VOLTAGE (V)

FIG. 3 TYPICAL FORWARD CHARACTERISTICS

PULSE WIDTH=300μs

1% DUTY CYCLE

TJ=125℃

TJ=25℃