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MBRF1045 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # MBRF1045
Description  Isolated Schottky Barrier Rectifiers
PDF  4 Pages
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

MBRF1045 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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CREAT BY ART
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- UL Recognized File # E-326243
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
VRRM
35
45
50
60
90
100
150
200
V
VRMS
24
31
35
42
63
70
105
140
V
VDC
35
45
50
60
90
100
150
200
V
IF(AV)
A
IRRM
A
dV/dt
V/μs
RθJC
4
OC/W
TJ
OC
TSTG
OC
Document Number: DS_D1309008
Version: K13
Weight:
1.7 g (approximately)
MBRF1035 thru MBRF10200
Taiwan Semiconductor
Isolated Schottky Barrier Rectifiers
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
ITO-220AC
MBRF
1050
MBRF
1060
MBRF
1090
MBRF
10100
MBRF
10150
Case:
ITO-220AC
Polarity:
As marked
Mounting torque:
5 in-lbs maximum
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
MBRF
1035
MBRF
1045
Peak repetitive forward current
(Rated VR, square wave, 20KHz)
IFRM
A
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
IFSM
A
Peak repetitive reverse surge current (Note 1)
1
Maximum instantaneous forward voltage (Note 2)
IF=10A, TJ=25℃
IF=10A, TJ=125℃
VF
mA
15
10
V
0.70
0.80
0.85
Typical thermal resistance
3
Operating junction temperature range
6
Maximum reverse current @ Rated VR TJ=25 ℃
TJ=125 ℃
IR
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
MBRF
10200
10
20
150
0.5
Voltage rate of change (Rated VR)
- 55 to +175
1.05
-
0.1
2
10000
- 55 to +150
0.57
0.70
0.71


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