EGF1A, EGF1B, EGF1C, EGF1D

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Vishay General Semiconductor

Revision: 16-Aug-13

1

Document Number: 88579

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Surface Mount Glass Passivated Ultrafast Rectifier

FEATURES

• Superectifier structure for high reliability condition

• Cavity-free glass-passivated junction

• Ideal for automated placement

• Ultrafast reverse recovery time

• Low switching losses, high efficiency

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Meets MSL level 1, per J-STD-020, LF maximum peak of

250 °C

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

TYPICAL APPLICATIONS

For use in high frequency rectification and freewheeling

application in switching mode converters and inverters for

consumer, computer, automotive and telecommunication.

MECHANICAL DATA

Case: DO-214BA, molded epoxy over glass body



Molding compound meets UL 94 V-0 flammability rating



Base P/N-E3 - RoHS-compliant, commercial grade



Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

PRIMARY CHARACTERISTICS

1.0 A

50 V, 100 V, 150 V, 200 V

30 A

50 ns

1.0 V

175 °C

Package

DO-214BA (GF1)

Diode variations

Single die

DO-214BA (GF1)

SUPERECTIFIER

®

PARAMETER

SYMBOL

EGF1A

EGF1B

EGF1C

EGF1D

UNIT

Device marking code

EA

EB

EC

ED

Maximum repetitive peak reverse voltage

50

100

150

200

V

Maximum RMS voltage

35

70

105

140

V

Maximum DC blocking voltage

50

100

150

200

V

1.0

A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

30

A

Operating junction and storage temperature range

- 65 to + 175

°C