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BC547B Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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BC547B Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 5 page  - These types are subdivided into three groups A, B and C according to their current gain - Moisture sensitivity level 1 - Driver transistor - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code - Case: TO-92 small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260°C/10s - Weight: 190 mg (approximately) SYMBOL UNIT PTOT mW IC mA ICM mA TJ , TSTG °C SYMBOL UNIT VCB= 30V ICBO nA VEB= 5 V IEBO nA Document Number: DS_S1405001 Current Gain Group: A B C BC546 BC547, BC550 BC548, BC549 BC546 BC547, BC550 BC548, BC549 - For switching and AF amplifier applications Taiwan Semiconductor VALUE Small Signal Product NPN Transistor MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) TO-92 BC546A/B/C ~ BC550A/B/C MECHANICAL DATA BC547, BC550 BC548, BC549 FEATURES Total Power dissipation 500 VCBO Collector-Base Voltage V 6 6 6 PARAMETER V Collector-Emitter Breakdown Voltage IC= 10mA V 200 65 45 30 Collector-Emitter Voltage Emitter-Base Voltage BC548, BC549 6 VCEO Peak Collector Current Collector Current BC546 BC546 BC547, BC550 BC548, BC549 BC546 BC547, BC550 V V V 80 50 30 65 45 30 Junction and Storage Temperature Range 100 -65 to + 150 6 6 VEBO Version: B14 PARAMETER Collector-Base Breakdown Voltage IC= 100μA 80 50 30 Collector Base Cutoff Current Emitter Base Cutoff Current DC Current Gain VCE= 5V, IC= 2mA V(BR)CBO hFE Emitter-Base Breakdown Voltage IE= 100μA V(BR)CEO V(BR)EBO BC546 BC547, BC550 BC548, BC549 100 V 220 450 800 200 420 MIN - - 110 MAX - - - 15 |
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