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MMST3904 Datasheet(PDF) 2 Page - Diodes Incorporated |
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MMST3904 Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 5 page  MMST3904 Document number: DS30082 Rev. 12 - 2 2 of 5 www.diodes.com October 2014 © Diodes Incorporated MMST3904 Absolute Maximum Ratings (@TA = +25°C unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 200 mA Thermal Characteristics (@TA = +25°C unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 6) Pd 200 mW Thermal Resistance, Junction to Ambient (Note 6) RJA 625 °C/W Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C ESD Ratings (Note 7) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Electrical Characteristics (@TA = +25°C unless otherwise specified.) Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Collector-Base Breakdown Voltage BVCBO 60 V IC = 10µA, IE = 0 Collector-Emitter Breakdown Voltage BVCEO 40 V IC = 1mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO 5 V IE = 10µA, IC = 0 Collector Cutoff Current ICEX 50 nA VCE = 30V, VEB(OFF) = 3V Base Cutoff Current IBL 50 nA VCE = 30V, VEB(OFF) = 3V ON CHARACTERISTICS (Note 8) DC Current Gain hFE 40 70 100 60 30 300 IC = 100uA, VCE = 1V IC = 1mA, VCE = 1V IC = 10mA, VCE = 1V IC = 50mA, VCE = 1V IC = 100mA, VCE = 1V Collector-Emitter Saturation Voltage VCE(sat) 0.25 0.30 V IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA Base-Emitter Saturation Voltage VBE(sat) 0.65 0.85 0.95 V IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo 4 pF VCB = 5V, f = 1.0MHz, IE = 0 Input Capacitance Cibo 8 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1 10 kΩ VCE = 10V, IC = 1mA, f = 1.0MHz Voltage Feedback Ratio hre 0.5 8.0 x 10 -4 Small Signal Current Gain hfe 100 400 Output Admittance hoe 1 40 µS Current Gain-Bandwidth Product fT 300 MHz VCE = 20V, IC = 10mA, f = 100MHz Noise Figure NF 5 dB VCC = 5V, IC = 100A, RS = 1kΩ, f = 1MHz SWITCHING CHARACTERISTICS Delay Time td 35 ns VCC = 3V, IC = 10mA, VBE(OFF) = -0.5V, IB1 = 1mA Rise Time tr 35 ns Notes: 6. For a device mounted with the collector lead on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. |
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