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TSM4NB65 Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM4NB65 Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 10 page  TSM4NB65 650V N-Channel Power MOSFET 2/10 Version: C14 Thermal Performance Parameter Symbol Limit Unit IPAK/DPAK ITO-220 TO-220 Thermal Resistance - Junction to Case RӨJC 2.5 5 1.78 ℃/W Thermal Resistance - Junction to Ambient RӨJA 83 62.5 62.5 ℃/W Electrical Specifications (TA=25℃ unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static (Note 4) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 650 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 2A RDS(ON) -- 2.7 3.37 Ω Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2.5 3.6 4.5 V Zero Gate Voltage Drain Current VDS = 650V, VGS = 0V IDSS -- -- 1 µA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Forward Transfer Conductance VDS = 40V, ID = 2A gfs -- 2.6 -- S Dynamic (Note 5) Total Gate Charge VDS = 480V, ID = 4A, VGS = 10V Qg -- 13.46 -- nC Gate-Source Charge Qgs -- 2.98 -- Gate-Drain Charge Qgd -- 6.66 -- Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Ciss -- 549 -- pF Output Capacitance Coss -- 75 -- Reverse Transfer Capacitance Crss -- 18 -- Switching (Note 6) Turn-On Delay Time VGS = 10V, ID = 4A, VDD = 300V, RG = 25Ω td(on) -- 11 -- ns Turn-On Rise Time tr -- 20 -- Turn-Off Delay Time td(off) -- 30 -- Turn-Off Fall Time tf -- 19 -- Source-Drain Diode Ratings and Characteristic (Note 4) Source Current Integral reverse diode in the MOSFET IS -- -- 4 A Source Current (Pulse) ISM -- -- 16 A Diode Forward Voltage IS = 4A, VGS = 0V VSD -- -- 1.13 V Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L = 10mH, IAS = 2.4A, VDD = 50V, RG = 25Ω, Starting TJ = 25℃ 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. |
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