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TSM60N600CPROG Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM60N600CPROG Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 9 page  TSM60N600 600V, 8A, 0.6Ω N-Channel Power MOSFET 2/9 Version: A14 Thermal Performance Parameter Symbol Limit Unit ITO-220 IPAK/DPAK Junction to Case Thermal Resistance RӨJC 3.9 1.5 oC/W Junction to Ambient Thermal Resistance RӨJA 62 oC/W Electrical Specifications (TJ=25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static (Note 4) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 600 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2 3 4 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 1 µA Drain-Source On-State Resistance VGS = 10V, ID = 4A RDS(ON) -- 0.49 0.6 Ω Dynamic (Note 5) Total Gate Charge VDS = 380V, ID = 8A, VGS = 10V Qg -- 13 -- nC Gate-Source Charge Qgs -- 3 -- Gate-Drain Charge Qgd -- 4 -- Input Capacitance VDS = 100V, VGS = 0V, f = 1.0MHz Ciss -- 743 -- pF Output Capacitance Coss -- 66 -- Gate Resistance f=1MHz, open drain Rg -- 3.2 -- Ω Switching (Note 6) Turn-On Delay Time VDD = 380V, RGEN = 25Ω, ID = 8A, VGS = 10V, td(on) -- 21 -- ns Turn-On Rise Time tr -- 15 -- Turn-Off Delay Time td(off) -- 40 -- Turn-Off Fall Time tf -- 9 -- Source-Drain Diode (Note 4) Forward On Voltage IS=8A, VGS=0V VSD -- -- 1.4 V Reverse Recovery Time VR=200V, IS=4A dIF/dt=100A/µs trr -- 185 -- ns Reverse Recovery Charge Qrr -- 1.4 -- µC Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L=50mH, IAS=2A, VDD=50V, RG=25Ω, Starting TJ=25 oC 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. |
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