TSM180N03CS datasheet(2/5 Pages) TSC

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TSM180N03CS

30V N-Channel Power MOSFET

2/5

Version: A14

Electrical Specifications (TJ=25

oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

BVDSS

Drain-Source On-State Resistance

VGS = 10V, ID = 8A

RDS(ON)

VGS = 4.5V, ID = 5A

Gate Threshold Voltage

VDS = VGS, ID = 250µA

VGS(TH)

1.2

1.6

Zero Gate Voltage Drain Current

VDS = 30V, VGS = 0V

IDSS

µA

VDS = 24V, TJ = 125ºC

Gate Body Leakage

VGS = ±20V, VDS = 0V

IGSS

±100

Forward Transconductance

(Note 3)

VDS = 10V, ID = 5A

gfs

Dynamic

Total Gate Charge

(Note 3,4)

VDS = 15V, ID = 8A,

VGS = 4.5V

4.1

Gate-Source Charge

(Note 3,4)

Qgs

Gate-Drain Charge

(Note 3,4)

Qgd

2.1

Input Capacitance

VDS = 25V, VGS = 0V,

f = 1.0MHz

Ciss

345

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Switching

Turn-On Delay Time

(Note 3,4)

VDD = 15V, ID = 1A,

VGS = 10V, RG =6Ω

td(on)

2.8

Turn-On Rise Time

(Note 3,4)

7.2

Turn-Off Delay Time

(Note 3,4)

td(off)

15.8

Turn-Off Fall Time

(Note 3,4)

4.6

Source-Drain Diode Ratings and Characteristic

Maximum Continuous Drain-Source

Diode Forward Current

Integral reverse diode in

the MOSFET

Maximum Pulse Drain-Source Diode

Forward Current

ISM

Diode-Source Forward Voltage

VGS = 0V, IS = 1A

VSD

Note:

Pulse width limited by safe operating area

L=1mH, IAS=8A, VDD=25V, RG=25Ω, Starting TJ=25ºC

Pulse test: pulse width

≤300µs, duty cycle ≤2%

Switching time is essentially independent of operating temperature.

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