TSM500N03CPROG datasheet(2/5 Pages) TSC

2 / 5 page

TSM500N03

30V N-Channel Power MOSFET

2/5

Version: A14

Electrical Specifications (TC=25°C unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

BVDSS

Drain-Source On-State Resistance

VGS = 10V, ID = 8A

RDS(ON)

mΩ

VGS = 4.5V, ID = 8A

Gate Threshold Voltage

VDS = VGS, ID = 250µA

VGS(TH)

1.7

Zero Gate Voltage Drain Current

VDS = 30V, VGS = 0V

IDSS

µA

VDS = 24V, Tc = 150°C

Gate Body Leakage

VGS = ±20V, VDS = 0V

IGSS

±100

Dynamic

Total Gate Charge

(Note 2,3)

VDS = 24V, ID = 10A,

VGS = 4.5V

Gate-Source Charge

(Note 2,3)

Qgs

1.6

Gate-Drain Charge

(Note 2,3)

Qgd

2.4

Input Capacitance

VDS = 25V, VGS = 0V,

f = 1.0MHz

Ciss

270

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Switching

Turn-On Delay Time

(Note 2,3)

VDD = 15V, ID = 10A,

VGS = 10V, RGEN =3.3Ω

td(on)

Turn-On Rise Time

(Note 2,3)

Turn-Off Delay Time

(Note 2,3)

td(off)

Turn-Off Fall Time

(Note 2,3)

Source-Drain Diode Ratings and Characteristic

Diode-Source Forward Voltage

VGS = 0V, IS = 5A

VSD

1.3

Reverse Recovery Time

(Note 2)

VGS = 0V, IS = 10A

dIF/dt = 100A/µs

trr

Reverse Recovery Charge

(Note 2)

Qrr

Note:

Pulse width limited by safe operating area

Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%

Switching time is essentially independent of operating temperature.

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