TSM2302 datasheet(1/6 Pages) TSC

Part #	TSM2302

Description	20V N-Channel MOSFET

PDF	6 Pages

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Manufacturer	TSC [Taiwan Semiconductor Company, Ltd]

Direct Link	http://www.taiwansemi.com

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1 / 6 page

TSM2302

20V N-Channel MOSFET

1/6

Version: C15

SOT-23

Key Parameter Performance

Parameter

Value

Unit

VDS

20

V

RDS(on) (max)

VGS = 4.5V

65

m

Ω

VGS = 2.5V

95

Qg

5.4

nC

Features

●

Advance Trench Process Technology

●

High Density Cell Design for Ultra Low On-resistance

Block Diagram

Application

●

Load Switch

●

PA Switch

Ordering Information

Part No.

Package

Packing

TSM2302CX RF

SOT-23

3kpcs / 7

” Reel

TSM2302CX RFG

SOT-23

3kpcs / 7

” Reel

Note: “G” denotes for Halogen- and Antimony-free as those which

contain <900ppm bromine, <900ppm chlorine (<1500ppm total

Br + Cl) and <1000ppm antimony compounds

Absolute Maximum Ratings (T

C = 25°C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

±8

V

Continuous Drain Current

ID

2.8

A

Pulsed Drain Current

(Note 1)

IDM

8

A

Continuous Source Current (Diode Conduction)

(Note 2)

IS

1.6

A

Maximum Power Dissipation

Ta = 25°C

PD

1.25

W

Ta = 75°C

0.8

Operating Junction and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Thermal Performance

Parameter

Symbol

Limit

Unit

Thermal Resistance Junction to Foot

RӨJF

75

°C/W

Thermal Resistance Junction to Ambient

RӨJA

145

°C/W

N-Channel MOSFET

Pin Definition:

1. Gate

2. Source

3. Drain

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