TSM2328 datasheet(2/5 Pages) TSC

2 / 5 page

TSM2328

100V N-Channel MOSFET

2/5

Version: B14

Electrical Specifications (TJ=25

oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

BVDSS

100

Drain-Source On-State Resistance

VGS = 10V, ID = 1.5A

RDS(ON)

250

mΩ

Gate Threshold Voltage

VDS = VGS, ID = 250µA

VGS(TH)

1.0

2.5

Zero Gate Voltage Drain Current

VDS = 80V, VGS = 0V

IDSS

µA

Gate Body Leakage

VGS = ±20V, VDS = 0V

IGSS

±100

On-State Drain Current

VDS = 5V, VGS = 10V

ID(ON)

Forward Transfer Conductance

VDS = 15V, ID = 1.5A

gfs

Diode Forward Voltage

IS = 1A, VGS = 0V

VSD

1.2

Dynamic

(Note 2)

Total Gate Charge

VDS = 80V, ID = 1.5A,

VGS = 5V

11.1

Gate-Source Charge

Qgs

4.4

Gate-Drain Charge

Qgd

Input Capacitance

VDS = 25V, VGS = 0V,

f = 1.0MHz

Ciss

975

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Switching

(Note 3)

Turn-On Delay Time

VDD = 30V, ID = 1A,

VGEN = 10V, RL =30Ω,

RG =6Ω

td(on)

Turn-On Rise Time

9.4

Turn-Off Delay Time

td(off)

26.8

Turn-Off Fall Time

2.6

Note:

Limited by maximum junction temperature.

Pulse test: pulse width ≤300µs, duty cycle ≤2%.

Guaranteed by design, not subject to production testing

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