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TSM3442 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # TSM3442
Description  N-Channel Power MOSFET
PDF  7 Pages
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSM3442 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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TSM3442
Taiwan Semiconductor
Document Number: DS_P0000076
1
Version: B15
N-Channel Power MOSFET
20V, 4A, 70mΩ
FEATURES
●
Advance Trench Process Technology
●
High Density Cell Design for Ultra Low On-resistance
APPLICATION
●
Load Switch
●
PA Switch
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS
20
V
RDS(on) (max)
VGS = 4.5V
70
mΩ
VGS = 2.5V
90
Qg
5.4
nC
SOT-26
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (T
A = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±8
V
Continuous Drain Current
(Note 1)
TC = 25°C
ID
4
A
TC = 100°C
2.4
Pulsed Drain Current
(Note 2)
IDM
8
A
Total Power Dissipation @ TC = 25°C
PDTOT
1.25
W
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
30
°C/W
Junction to Ambient Thermal Resistance
RӨJA
80
°C/W
Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RӨJA shown below for single device operation on FR-4 PCB in still air
,


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