TSM4806

20V N-Channel MOSFET

1/6

Version: A14

SOP-8

Key Parameter Performance

Parameter

Value

Unit

20

V

20

mΩ

25

31

12.3

nC

Features

●

Advanced High Cell Density Trench Technology.

●

Low Gate Charge.

Block Diagram

Application

●

Networking DC-DC Power System.

●

Load Switch.

Ordering Information

Part No.

Package

Packing

TSM4806CS RLG

SOP-8

2.5kpcs / 13” Reel

Note: “G” denotes Halogen Free Product.

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

20

V

Gate-Source Voltage

±8

V

Continuous Drain Current

a

28

A

Pulsed Drain Current

b

70

A

Continuous Source Current (Diode Conduction)

a,c

28

A

Total Power Dissipation

2

W

Storage Temperature Range

-55 to +150

Operating Junction Temperature Range

-55 to +150

Thermal Performance

Parameter

Symbol

Limit

Unit

Thermal Resistance Junction to Lead

40

Thermal Resistance Junction to Ambient

62.5

Notes:

a. The data tested by surface mounted on a 1 inch

b. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2% surface mounted on FR4 Board, t ≤ 5s.

N-Channel MOSFET

Pin Definition:

1. Source

8. Drain

2. Source

7. Drain

3. Source

6. Drain

4. Gate

5. Drain