18.08.2010

LED770_03AU.doc

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LED770-03AU

Infrared LED Lamp

LED770-03AU is an AlGaAs LED mounted on a lead frame with a clear epoxy lens.

On forward bias, it emits a spectral band of radiation which peaks at 770 nm.

Specifications

Outer dimension (Unit: mm)

1) Product Name

Infrared LED Lamp

2) Type No.

LED770-03AU

3) Chip

(1) Chip Material

AlGaAs

(2) Peak Wavelength 770 nm typ.

4) Package

(1) Type

5 mm clear molding

(2) Resin Material

Epoxy Resin

(3) Lead Frame

Soldered

Absolute Maximum Ratings

Item

Symbol

Maximum Rated Value

Unit

Ambient Temperature

Power Dissipation

190

mW

Ta = 25°C

Forward Current

100

mA

Ta = 25°C

Pulse Forward Current

500

mA

Ta = 25°C

Reverse Voltage

5

V

Ta = 25°C

Operating Temperature

-30 ~ +85

°C

Storage Temperature

-30 ~ +100

°C

Soldering Temperature

260

°C

‡

Pulse Forward Current condition: Duty = 1% and Pulse Width = 10 µs.

‡

Soldering condition: Soldering condition must be completed within 3 seconds at 260°C

Electro-Optical Characteristics [Ta=25°C]

Item

Symbol

Condition

Minimum

Typical

Maximum

Unit

Forward Voltage

1.75

1.95

V

Reverse Current

10

uA

Total Radiated Power

13.0

18.0

mW

Radiant Intensity

18

35

mW/sr

Peak Wavelength

λP

750

770

790

nm

Half Width

Δλ

35

nm

Viewing Half Angle



α

±15

deg.

Rise Time

tr

80

ns

Fall Time

tf

80

ns

‡

Total Radiated Power is measured by Photodyne #500

‡

Radiant Intensity is measured by Tektronix J-6512