SP632S datasheet(2/6 Pages) SAMHOP

2 / 6 page

Symbol

Min

Typ

Max

Units

BVDSS

IGSS

±100

VGS(th)

gFS

CISS

2280

COSS

144

CRSS

117

tD(ON)

tD(OFF)

VDS=25V,VGS=0V

SWITCHING CHARACTERISTICS

VDD=30V

ID=1A

VGS=10V

RGEN= 6 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

m ohm

VGS=10V , ID=5A

VDS=10V , ID=5A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

IDSS

Gate Threshold Voltage

VDS=VGS , ID=250uA

VDS=48V , VGS=0V

VGS= ±20V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

VGS=4.5V , ID=4A

m ohm

f=1.0MHz

SP632S

www.samhop.com.tw

Jan,24,2014

Qgs

Qgd

7.6

Gate-Drain Charge

Gate-Source Charge

VDS=30V,ID=5A,

VGS=10V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

15.6

VDS=30V,ID=5A,VGS=10V

VDS=30V,ID=5A,VGS=4.5V

VSD

Diode Forward Voltage

VGS=0V,IS=1A

0.75

1.2

Notes

a.Surface Mounted on FR4 Board of 1 inch2 , 1oz.

b.Guaranteed by design, not subject to production testing.

c.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)

d.Drain current limited by maximum junction temperature.

1.5

Ver 1.1

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