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BAS40LT1 Datasheet(PDF) 1 Page - Leshan Radio Company |
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BAS40LT1 Datasheet(HTML) 1 Page - Leshan Radio Company |
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1 / 2 page ![]() LESHAN RADIO COMPANY, LTD. BAS40LT1–1/2 Schottky Barrier Diode BAS40LT1 1 3 2 CASE 318–08, STYLE 11 SOT–23 (TO–236AB) * 40V SCHOTTKY BARRIER DIODES ANODE 1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Min- iature surface mount package is excellent for hand held and portable applications where space is limited. MAXIMUM RATINGS (T J = 150°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage VR 40 Volts Forward Power Dissipation PF @ TA = 25°C 225 mW Derate above 25°C 1.8 mW/°C Operating Junction and Storage TJ, Tstg –55 to +150 °C Temperature Range ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Reverse Breakdown Voltage (IR = 10 µA) V(BR)R 40 — Volts Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT — 5.0 pF Reverse Leakage (VR = 25 V) IR — 1.0 µAdc Forward Voltage (IF = 0.1 mAdc) VF — 380 mVdc Forward Voltage (IF = 30 mAdc) VF — 500 mVdc Forward Voltage (IF = 100 mAdc) VF — 1.0 Vdc CATHODE 3 |
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