SP2013 datasheet(1/8 Pages) SAMHOP

Part #	SP2013

Description	Super high dense cell design for low RDS(ON).

PDF	8 Pages

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Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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1 / 8 page

Suface Mount Package.

S mHop Microelectronics C orp.

a

SP2013

Symbol

VDS

VGS

IDM

75

W

A

PD

°C

1.67

-55 to 150

ID

Units

Parameter

-20

-8.5

-49

°C/W

V

±12

TA=25°C

Gate-Source Voltage

Drain-Source Voltage

THERMAL CHARACTERISTICS

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (m

Ω) Max

-20V

-8.5A

21

@

VGS=-4.0V

20

@

VGS=-4.5V

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)

Limit

Drain Current-Continuous

a

-Pulsed b

A

Maximum Power Dissipation

a

Operating Junction and Storage

Temperature Range

TJ, TSTG

Thermal Resistance, Junction-to-Ambient

R JA

www.samhop.com.tw

Jul,18,2013

1

Details are subject to change without notice.

TA=25°C

TA=70°C

A

TA=70°C

W

Green

Product

-6.8

1.07

25

@

VGS=-3.1V

28

@

VGS=-2.5V

22

@

VGS=-3.7V

P-Channel Enhancement Mode Field Effect Transistor

d

4

3

2

1

D

G

S

5

6

7

8

S

TSON 3.3 x 3.3

Pin 1

Ver 1.1

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SP2013 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp.

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