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SP2108 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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SP2108 Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
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1 / 7 page ![]() Suface Mount Package. S mHop Microelectronics C orp. a SP2108 Symbol VDS VGS IDM W A PD °C 4 -55 to 150 ID Units Parameter 100 1.2 5 V V ±20 TA=25°C Gate-Source Voltage Drain-Source Voltage PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max 100V 1.2A 932 @ VGS=4.5V 811 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuous -Pulsed ac A Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, TSTG Ver 1.0 www.samhop.com.tw Sep,11,2014 1 Details are subject to change without notice. TA=25°C TA=70°C A TA=70°C W Dual N-Channel Enhancement Mode Field Effect Transistor Green Product 0.96 1.6 EAS Single Pulse Avalanche Energy d mJ 2.5 THERMAL CHARACTERISTICS 50 °C/W Thermal Resistance, Junction-to-Ambient R JA ESD Protected. 4 3 2 1 D2 D2 D1 D1 G 2 S 2 G 1 S 1 5 6 7 8 c PDFN 5x6 PIN1 |
Similar Part No. - SP2108 |
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Similar Description - SP2108 |
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